| 摘要 |
PROBLEM TO BE SOLVED: To obtain a nitride semiconductor for use in a light emitting element, e.g. a light emitting diode or a laser diode, or a light receiving element, e.g. a solar cell or a photosensor, and a method for growing a low defect nitride semiconductor substrate comprising a nitride semiconductor. SOLUTION: A first protective film is formed in pattern on a different kind of substrate and a nitride semiconductor is grown at the window part of the protective film. Subsequently, the first protective film is removed and a nitride semiconductor layer is grown in the lateral direction using the nitride semiconductor as a nucleus. Furthermore, a second protective film is formed in pattern thereon, a nitride semiconductor is grown at the window part of the protective film, the second protective film is removed and a nitride semiconductor layer is grown in the lateral direction using the nitride semiconductor as a nucleus. |
