发明名称 SEMICONDUCTOR DEVICE, RADIATION DETECTING DEVICE, AND RADIOGRAPH IMAGING SYSTEM
摘要 PROBLEM TO BE SOLVED: To prevent degradation in yield caused by disconnection of a wiring in a panel manufacturing process by forming a redundant circuit, having a spare wiring which will not reduce the numerical aperture of a photoelectric conversion element. SOLUTION: A gate line Vg4 is electrically insulated from a Vg redundant wiring, while being arranged to form a cross part G point between wirings. Since a Vg redundant wiring Y is formed simultaneously with an Sig line, no additional manufacturing process is required for forming the Vg redundant wiring Y. If a disconnection occurs at the gate line Vg4, by having the cross part G irradiated with laser, to electrically connect the gate line Vg4 with the Vg redundant wiring Y. Thus, a gate drive pulse is applied, even to a thin- film transistor on the disconnected wiring via the Vg redundant wiring Y. So, the degradation in yield due to disconnection of the gate line Vg4 is prevented without reducing aperture ratio at the photoelectric conversion element.
申请公布号 JP2002100753(A) 申请公布日期 2002.04.05
申请号 JP20010177325 申请日期 2001.06.12
申请人 CANON INC 发明人 ISHII TAKAMASA;MOCHIZUKI CHIORI
分类号 G01J1/44;G01T1/20;G01T1/24;G01T7/00;H01L21/3205;H01L23/52;H01L27/14;H01L27/146;H01L31/09;H04N5/32;H04N5/335;H04N5/369;H04N7/18;(IPC1-7):H01L27/14;H01L21/320 主分类号 G01J1/44
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