| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device, which has high density and no connecting parts or through-holes, and is small and highly reliable, and to provide a method of manufacturing the semiconductor device with high accuracy and high efficiency. SOLUTION: The semiconductor device comprises an IC chip 1, capacitor 2, a filter 3, an insulating chip holder 4 for integrally embedding these circuit parts 1, 2 and 3, and an insulating resin layer 5 for covering the surfaces of these circuits and the holder, a circuit pattern 6 which is electrolytically cast on the layer 5 and is electrically connected to bumps 1a, 2a and 3a formed on the terminals of the circuit parts. For the manufacturing method, after each circuit part is housed and fixed in a recessed part 4a or a through-hole 4b formed on the holder 4, the surfaces of each circuit part and the holder are covered with the insulating resin layer, then the surface of the insulating resin layer is polished to expose the bumps, thereby forming a circuit pattern which is electrically connected to the bumps.</p> |
