| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device by which the top edge of the opening of an isolation trench can be preferably rounded after forming the isolation trench thereon, while maintaining the quality of the semiconductor substrate. SOLUTION: After the trench is formed on the semiconductor substrate formed of silicon, the substrate is inserted into a heat treatment equipment under an atmosphere containing a small amount of oxygen. At this time, a thin oxide film is formed on the surface of an opening of the trench of the semiconductor substrate. Thereafter, the atmosphere in the heat treatment equipment is changed to an un-oxidizing atmosphere, and the temperature of the atmosphere is raised. A thermal oxidation treatment is carried out after the temperature in the heat treatment equipment is raised to about 950 deg.C to 1,150 deg.C in which the viscosity coefficient of a silicon oxide film sufficiently decreases.
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