| 摘要 |
PROBLEM TO BE SOLVED: To reduce a carbon-based material deposited inside of a processing chamber which is produced during a ultra-violet processing of a semiconductor substrate, and to attain processing properties of long-term stability and a good yield of products. SOLUTION: In the substrate processing apparatus, a photo-catalytic layer 16, which is transparent for ultra-violet and catalyzes photo-degradation of the carbon-based material produced from a resist pattern 11 due to ultra-violet processing, is formed on a surface of a quartz-glass plate 2 dividing an ultra-violet radiation lamp 5 from the processing chamber 4.
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