发明名称 SUBSTRATE SUPPORT FOR HEAT TREATMENT
摘要 <p>PROBLEM TO BE SOLVED: To suppress crystal dislocation due to a flaw originated from a slip by suppressing the crystal dislocation caused by a stress concentration by reducing the stress at a supporting part, and by suppressing and minimizing the slip of the substrate to be processed to the top end of the support member which supports the substrate. SOLUTION: A substrate support for heat treatment has a support plate 23 and a plurality of support members 24 provided standing on the support plate 23. The support is consisted in order to support the substrate 22 to be treated by putting the under face of the substrate 22 on upper end edges of a plurality of support members 24. The plurality of support members 24 are comprised of a plurality of elastically deformable wire members 24a. The each upper ends of the plurality of the wire members 24a are bent. It is constituted in order to put the under face of the substrate 22 on each bulge concaved sides of top ends of the plurality of wires 24a. The plurality of wire members 24a are comprised of quarts or SiC.</p>
申请公布号 JP2002100668(A) 申请公布日期 2002.04.05
申请号 JP20000289826 申请日期 2000.09.25
申请人 MITSUBISHI MATERIALS SILICON CORP 发明人 ONO NAOKI;SHIRAKI HIROYUKI
分类号 C03B20/00;H01L21/22;H01L21/324;H01L21/68;H01L21/683;(IPC1-7):H01L21/68 主分类号 C03B20/00
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