发明名称 |
SUPPORTER FOR HEAT-TREATED SUBSTRATE |
摘要 |
<p>PROBLEM TO BE SOLVED: To suppress a crystal transition based on centralized stress by reducing stress at supported portions, and to suppress the crystal transition based on a flaw caused by a slip by minimally decreasing the slip between a processed substrate and upper end of the supported member for supporting the processing substrate. SOLUTION: The substrate supporter for heat treatment has a supporting plate 23 and plural supporting members 24 erected on the supporting plate 23, and is configured to horizontally support a preprocessing substrate 22 by placing the lower surface of the substrate 22 to be treated on the upper terminal edges of the plural supporting members 24. Each of supporting members 24 is composed of a coil spring 24a fixing the lower end thereof on the supporting plate 23 and a cap 24b covering the upper end of the coil spring 24a, and the upper terminal edge of the cap 24b is formed into plane capable of surface contact with the substrate 22 to be treated. Each of the coil spring 24a and the cap 24b is formed from quartz.</p> |
申请公布号 |
JP2002100581(A) |
申请公布日期 |
2002.04.05 |
申请号 |
JP20000289827 |
申请日期 |
2000.09.25 |
申请人 |
MITSUBISHI MATERIALS SILICON CORP |
发明人 |
ONO NAOKI;SHIRAKI HIROYUKI |
分类号 |
H01L21/683;H01L21/22;H01L21/31;H01L21/68;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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