| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a diode, etc., which will not change the structure of its Schottky interface. SOLUTION: This Schottky barrier diode has an anode electrode, having unevenness on one surface, a p-type semiconductor layer which is jointed with a 1st region on the other surface of the anode electrode, an n-type semiconductor layer which is jointed with a 2nd region on the other surface of the anode electrode, and a cathode electrode and a projection part of the anode electrode is positioned above the p-type semiconductor layer.</p> |
