发明名称 BOOSTING CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To obtain stable boosting capability in a wide operation voltage region and to reduce current consumption when operation voltage is high, in a boosting circuit of an EEPROM. SOLUTION: This circuit is provided with a transmission gate 101 in which plural capacitors C1, C2 are connected in parallel in each stage, while at least one of the capacitors C1, C2 is selected as an object of coupling operation. Capacity of a whole circuit is switched in accordance with operation voltage VDD by controlling conduction of the transmission gate 101 by a signal F and selecting at least one of two capacitors C1, C2.</p>
申请公布号 JP2002100193(A) 申请公布日期 2002.04.05
申请号 JP20000290708 申请日期 2000.09.25
申请人 TOSHIBA MICROELECTRONICS CORP;TOSHIBA CORP 发明人 OGATA YOICHI
分类号 A23L1/305;A61K31/198;A61K31/205;A61K31/401;A61K31/405;A61K31/4172;A61P3/00;A61P3/02;G11C16/06;H02M3/07;(IPC1-7):G11C16/06 主分类号 A23L1/305
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