| 摘要 |
PROBLEM TO BE SOLVED: To obtain a thin film forming system for thin film transistor(TFT) in which a good semiconductor thin film can be formed by performing formation of a thin film on a substrate, crystallization through irradiation of high energy light and surface treatment of a crystal thin film continuously thereby eliminating the effect of impurities on the surface. SOLUTION: The thin film forming system comprises a linear plasma CVD system for depositing amorphous Si, a linear laser beam irradiating section for crystallizing the amorphous Si, and a linear plasma generator which can lightly oxidize the surface of a crystallized Si thin film with oxygen plasma. They are connected in series and substrates are processed in-line. The entire process progresses in the vacuum or in a controlled atmosphere and the plasma CVD the plasma processing system comprise a high density plasma generating section and a remote plasma where the film depositing section or the surface treating section is separated. Surface of a semiconductor is processed cleanly with low damage a good thin film transistor can be fabricated.
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