| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming metal wirings of a semiconductor element capable of easily forming copper wirings in a fine structure because of facilitating a selective copper vapor deposition using a copper precursor by implementing a plasma process or a radical plasma process and leaving a chemical reinforcing material layer only at the bottom of damacine patterns after a chemical reinforcing material layer accelerating the copper vapor deposi tion, is formed. SOLUTION: The method for forming metal wirings of the semiconductor element includes: a step for providing a semiconductor substrate on which an insulating layer 13 having the damacine patterns, is formed; a step for forming a dispersion preventing layer 14 on the insulating layer 13; a step for forming the chemical reinforcing material layer 15a on the dispersion preventing layer 14; a step for implementing the plasma process to leave the chemical reinforcing material layer 15a only at the bottom of the damacine patterns; a step for forming a copper layer 16a by using a CVD method; and a step for forming copper metal wirings 16 by using a hydrogen reducing thermal process and a chemical and mechanical polishing process.
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