| 摘要 |
PROBLEM TO BE SOLVED: To provide an MOS field effect transistor comprising a gate insulating film of high dielectric constant, while maintaining interface characteristics well maintained satisfactorily. SOLUTION: An MOS field effect transistor comprises a semiconductor substrate (1), whose main component is Si and a gate insulating film (3) comprising a perovskite dielectrics, which is jointed directly on the semiconductor substrate for epitaxial growth. The lattice constant of the perovskite dielectrics is 3.84Å<a<3.88 r. The perovskite dielectrics preferably comprises a composition represented by Sr1-xCaxTi1-yZryO3-d (0.8<=x<=1.0, 0<=y<=0.5, while (d) represents oxygen deficiency and 0<=d<=0.1).
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