发明名称 |
THIN FILM SEMICONDUCTOR MANUFACTURING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To allow forming and etching good semiconductor thin films and insulative films on a large glass substrate on which TFTs used for a LCD or an OLED, formed by using a remote plasma method. SOLUTION: Ends of a plurality of cylindrical chambers respectively including a plasma generator are coupled to a common space in which the substrate inserted. A plasma producing gas introduced from other ends of the cylindrical chambers, is excited to the plasma by a high frequency electric field radiated from working coils disposed in the middle of the cylindrical chambers. A raw material gas for forming the film is discharged from many holes disposed on supplying pipes installed in the X and Y directions adjacent to a surface of the substrate. A tube lamp and an exhausting pipe are installed adjacent to the supplying pipe in parallel. Three components are united and alternately scan the entire substrate in the X and Y directions. A heater is built in a substrate support. |
申请公布号 |
JP2002100623(A) |
申请公布日期 |
2002.04.05 |
申请号 |
JP20000326226 |
申请日期 |
2000.09.20 |
申请人 |
FUJI DAIICHI SEISAKUSHO:KK |
发明人 |
SAKAMOTO KIYOTOSHI;MORITA TATSUO |
分类号 |
B29C45/20;B29C45/77;C23C16/24;C23C16/44;C23C16/455;C23C16/48;C23C16/507;C23C16/509;C23C16/517;G06F17/13;H01J37/32;H01L21/302;H01L21/3065;H01L21/31;H05H1/46 |
主分类号 |
B29C45/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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