发明名称 THIN FILM SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To allow forming and etching good semiconductor thin films and insulative films on a large glass substrate on which TFTs used for a LCD or an OLED, formed by using a remote plasma method. SOLUTION: Ends of a plurality of cylindrical chambers respectively including a plasma generator are coupled to a common space in which the substrate inserted. A plasma producing gas introduced from other ends of the cylindrical chambers, is excited to the plasma by a high frequency electric field radiated from working coils disposed in the middle of the cylindrical chambers. A raw material gas for forming the film is discharged from many holes disposed on supplying pipes installed in the X and Y directions adjacent to a surface of the substrate. A tube lamp and an exhausting pipe are installed adjacent to the supplying pipe in parallel. Three components are united and alternately scan the entire substrate in the X and Y directions. A heater is built in a substrate support.
申请公布号 JP2002100623(A) 申请公布日期 2002.04.05
申请号 JP20000326226 申请日期 2000.09.20
申请人 FUJI DAIICHI SEISAKUSHO:KK 发明人 SAKAMOTO KIYOTOSHI;MORITA TATSUO
分类号 B29C45/20;B29C45/77;C23C16/24;C23C16/44;C23C16/455;C23C16/48;C23C16/507;C23C16/509;C23C16/517;G06F17/13;H01J37/32;H01L21/302;H01L21/3065;H01L21/31;H05H1/46 主分类号 B29C45/20
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