发明名称 |
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND OPTICAL DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element having little color blur of luminescence and high luminous efficiency. SOLUTION: The nitride semiconductor light-emitting element contains a luminescent layer 106, having a quantum well structure made up of alternately laminated quantum well layers and barrier layers. The quantum well layer consists of a nitride semiconductor which includes at least In. The barrier layer consists of the nitride semiconductor layer which includes at least As, P or Sb. |
申请公布号 |
JP2002100838(A) |
申请公布日期 |
2002.04.05 |
申请号 |
JP20000287291 |
申请日期 |
2000.09.21 |
申请人 |
SHARP CORP |
发明人 |
ARAKI MASAHIRO;TSUDA YUZO |
分类号 |
C30B29/38;H01L33/06;H01L33/32;H01L33/42;H01S5/323;H01S5/343 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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