METHOD FOR FORMING BORON DOPED SILICON FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a boron doped silicon film efficiently on a basic body with a high yield or at a high forming rate, for example, by a simple single stage operation or system. SOLUTION: A silicon film is formed on a basic body by feeding borane.dimethylsulfide complex and at least one kind of silicon compound selected from a group of cyclopentasilane and silylcyclopentasilane through a heating tube 2 under presence of inert organic medium vapor.