| 摘要 |
PROBLEM TO BE SOLVED: To enable thin finish working of a semiconductor wafer without cracking or chipping the semiconductor wafer and to form a metal electrode film on the back side of the semiconductor wafer without cracking or chipping the thinned semiconductor wafer, with which a semiconductor device is formed on the principal surface of the semiconductor wafer. SOLUTION: After the semiconductor device is formed on the principal surface of the semiconductor wafer, a wafer surface protecting adhesive tape with reinforcing frame is stuck onto the principal surface of the semiconductor wafer. In such a state, the back side of the semiconductor wafer is worked and the semiconductor wafer is finished to be thin.
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