| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element, having few crystal defects and superior characteristics. SOLUTION: In a nitride semiconductor light-emitting element, having a structure consisting of a plurality of layers 102-112 made of a nitride semiconductor on a GaN substrate 101, a transition inhibiting layer 104 consisting of a nitride semiconductor and having carbon, is included between a luminescent layer 107 and a substrate 101. The transposition inhibiting layer 104 is an AlGaN layer containing carbon with the density of 1014 cm3-1020 cm-3. The thickness of the transition inhibiting layer 104 is 40 nm-0.7μm. The transition inhibiting layer 104 can effectively prevent the generation of transition caused by lattice mismatch between an n-type GaN layer 102 and an n-type AlGaN clad layer 103.
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