| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a gate insulating film, having its reduction in dielectric strength suppressed. SOLUTION: In an element forming layer 3 on an SOI substrate 1, PchMOS 10 is insulated and separated, by being surrounded by a 1st trench 5, and NchMOS 20 is formed outside the 1st trench 5 side by side with the PchMOS 10 across the 1st trench 5. A gettering layer 7 is formed surrounding the NchMOS 20 and PchMOS 10, surrounded by the 1st trench 5 together, and the Nch MOS 20 and gettering layer 7 are adjacent to each other, across the element-forming layer 3. A 2nd trench 6 is formed outside the gettering layer 7.
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