METHOD FOR FORMING INSULATING FILM

摘要

PROBLEM TO BE SOLVED: To form an insulating film with a lower dielectric constant than the dielectric constants of SiO2 and SiOF used as an interlayer insulating film. SOLUTION: A lower perfluoro alkene compound and a lower epoxy compound are used as a raw material gas in a chamber 2 of a plasma CVD apparatus. Both compounds are plasma-polymerized in a plasma generated from both to form the insulating film as a copolymer on a processed substrate 4, such as a silicon substrate, etc.