| 摘要 |
PROBLEM TO BE SOLVED: To provide an embrocation for forming a ferroelectric thin film producing a smooth ferroelectric thin film. SOLUTION: The embrocation for forming the ferroelectric thin film includes an organic compound expressed by a formula HOOC-R1-X and an organic metal compound. In the formula, R1 is a bivalent organic group; X is one of any functional groups selected from a group comprising -CONR, 2R3, -OR2,-NR2R3,- NR2COR3, or expressed by formula I, formula II, formula III, -C≡N, -N≡N, -N≡C,-CR2=N-R3, -COR2 and -COCH2COOR2. However, R2 and R3 are a hydrogen atom, or a saturated or an unsaturated carbon hydride group independently.
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