Schottky junction with a stable live gate height on a layer of silicon carbide covered by a layer of metallic carbide

摘要

A Schottky junction presenting a stable live gate height of the order of 0.8 to 1 volt on a layer of silicon carbide incorporates a layer of refractory metal nitride on this layer of silicon carbide. An Independent claim is included for a method for the formation of such a Schottky junction on a silicon carbide substrate.