发明名称 DILUTE REMOTE PLASMA CLEAN
摘要 PROBLEM TO BE SOLVED: To provide a method and an apparatus for enhancing the etch characteristics of a plasma formed in a remote plasma generator. SOLUTION: A plasma formed in a remote plasma generator (27) flows through a tube (62) to a plenum (60) where it is diluted to form a plasma mixture before the plasma mixture flows into a processing chamber (15). The plasma mixture is used to clean deposits from the interior surfaces of the processing chamber, or can be used to perform an etch step on a processed wafer within the processing chamber. In one embodiment, a plasma formed from NF3 is diluted with N2 to etch residue from the surfaces of the processing chamber used to deposit silicon oxide glass. Diluting the plasma increases the etching rate and makes the etching rate more uniform across the diameter of the processing chamber.
申请公布号 JP2002100624(A) 申请公布日期 2002.04.05
申请号 JP20010124692 申请日期 2001.04.23
申请人 APPLIED MATERIALS INC 发明人 BALISH KENNETH E;NOWAK THOMAS;TANAKA TSUTOMU;BEALS MARK
分类号 C23C16/44;H01J37/32;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):H01L21/31;H01L21/306 主分类号 C23C16/44
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