| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, which can be manufactured with superior crystallinity, while penetrating dislocation, etc., from a substrate side are restrained without increasing the number of manufacturing processes, and at the same time, enables micronization of a chip structure. SOLUTION: A crystal layer, having an oblique crystal face (e.g., an S plane) which is slanted to a main surface of a substrate, is formed on the substrate. A first conductivity-type layer, an active layer and a second conductivity-type layer, which are stretched on a surface which is parallel with the oblique crystal plane, are formed on the crystal layer. At this point, a reflecting surface, which is stretched on the surface parallel to the oblique crystal plane, may be formed. The crystal layer, having the oblique crystal plane which is slanted with respect to the main surface of the substrate, is superior in crystallinity. Since the crystal plane is slanted, penetrating dislocation is prevented, and micronization of an element and isolation between elements are facilitated. |
