Halbleiter-Laser

摘要

The invention relates to a semiconductor laser comprising an anti-resonant waveguide (10), which is formed by a series of layers placed on a substrate (1). The series of layers comprises outer waveguide regions (2, 8), reflection layers (3, 7), and a waveguide core (11) provided with an active layer (5). This structure permits the production of semiconductor lasers having a low vertical beam divergence as well as a large beam cross-section.