METHOD OF HEAT-TREATING SILICON WAFER

摘要

A method of heat-treating a silicon wafer, which restricts the slip-dislocation of even a silicon wafer at least 300 mm in diameter by heat-treating it using an RTA device, forms oxygen deposits serving as a sufficient gettering site during a device production process, and does not require an additional process due to the absence of an unnecessary film on the wafer surface after heat treating. A method of heat-treating a silicon wafer produced by a Czochralski method by using a quick heating/quick cooling device, wherein a silicon wafer is heat-treated in an atmosphere of a mixed gas of nitrogen and argon containing 1-50 % by volume of nitrogen at 1150-1350 DEG C for 1-60 seconds.