发明名称 Semiconductor device including intermediate wiring element
摘要 An IGBT module comprises a ceramic substrate having a collector wiring element on a surface thereof, an IGBT chip provided on the collector wiring element, an insulative member provided on the collector wiring element and configured to cover at least edge portions of the IGBT chip, and an insulative sealing resin, provided on the ceramic substrate, for covering the IGBT chip and the insulative member. The sealing resin has lower insulation properties than the insulative member.
申请公布号 US2002038873(A1) 申请公布日期 2002.04.04
申请号 US20010953295 申请日期 2001.09.17
申请人 HIYOSHI MICHIAKI 发明人 HIYOSHI MICHIAKI
分类号 H01L23/28;H01L21/60;H01L23/24;H01L23/29;H01L23/48;H01L25/07;H01L25/18;(IPC1-7):H01L31/109;H01L31/072;H01L31/033;H01L31/032 主分类号 H01L23/28
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