MEMORY DEVICE INCLUDING NANOCLUSTERS AND METHOD FOR MANUFACTURE

摘要

A semiconductor memory device with a floating gate that includes a plurality of nanoclusters (21) and techniques useful in the manufacturing of such a device. The device is formed by first providing a semiconductor substrate (12) upon which a tunnel dielectric layer (14) is formed. A plurality of nanoclusters (19) is then grown on the tunnel dielectric layer (14). Such growth is facilitated by formation of a nitrogen-containing layer (502), which may be nitride, overlying the tunnel dielectric layer (14). Selected portions of the nitrogen-containing layer (502) may be removed to aid in controlling where nanoclusters are formed. The growth of the nanoclusters may also be facilitated by treating the surface of the tunnel dielectric layer (14) to alter the bonding structure of the tunnel dielectric layer. After formation of the nanoclusters (21), a control dielectric layer (20) is formed over the nanoclusters (21). A gate electrode (24) is then formed over the control dielectric, and portions of the control dielectric layer (20), the plurality of nanoclusters, and the gate dielectric that do not underlie the gate electrode are selectively removed. After formation of spacers (35), source and drain regions (32, 34) are formed by implantation in the semiconductor layer (12) such that a channel region is formed between the source and drain regions (32, 34) underlying the gate electrode (24).