Lithographic and etching process using a hardened photoresist layer

摘要

The present invention provides a lithography and etching process using a hardened photoresist layer. A material layer is formed over a substrate. An anti-reflective layer is formed over the material layer. A lithography process is performed to form a patterned photoresist layer. A reactive ion etching step is performed to remove the anti-reflective layer exposed by the patterned photoresist layer. At the same time, the patterned photoresist layer is hardened. The material layer is removed using the hardened patterned photoresist layer as a mask. The resolution is improved for lithography and the process window is enlarged for etching process.