RESIST PATTERN, PROCESS FOR PRODUCING THE SAME, AND UTILIZATION THEREOF

摘要

A resist pattern with which a fine wiring having a reduced conductor resistance can be formed and which is useful for forming semiconductor package substrate circuits at a higher density. The pattern has a film thickness of 1 to 100 mu m and an aspect ratio (ratio of the line width to the film thickness) of 3.5 or higher. The resist pattern can be produced, for example, from a photosensitive resin composition comprising (A) a binder polymer, (B1) a photopolymerizable compound having three ethylenically unsaturated bonds per molecule, (C) a photopolymerization initiator, and (D) either or both of a compound represented by the general formula (I) (wherein m is an integer of 2 to 6) and the compound represented by the general formula (II).