发明名称 |
TEMPERATURE CONTROLLING METHOD, THERMAL TREATING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A temperature control method is provided to perform quick, accurate, and error-free soaking control over all wafer areas to be thermally treated at a target temperature without requiring any skilled operator and to be automated by using a computer. CONSTITUTION: In the temperature control method of controlling a heating apparatus having at least two heating zones in such a manner that temperatures detected at predetermined locations equal a target temperature therefor, temperatures are detected at predetermined locations the number of which is larger than the number of the heating zones, and the heating apparatus is controlled in such a manner that the target temperature falls between a maximum value and a minimum value of a plurality of detected temperatures.
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申请公布号 |
KR20020025789(A) |
申请公布日期 |
2002.04.04 |
申请号 |
KR20010060364 |
申请日期 |
2001.09.28 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
NAKANO MINORU;TANAKA KAZUO;UENO MASAAKI;YAMAGUCHI HIDETO |
分类号 |
H01L21/22;C23C16/46;C30B25/16;C30B31/18;F27D19/00;G05D23/22;H01L21/00;H01L21/324;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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