| 发明名称 |
Method of depositing a metallic film on a substrate |
| 摘要 |
The present invention relates to a method of depositing a metallic film on a substrate. This method uses a carrier gas to deposit a source metal in the presence of an aqueous reducing agent such that the rate of deposition can be controlled by controlling the flow rate of the carrier gas.
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| 申请公布号 |
US2002039622(A1) |
申请公布日期 |
2002.04.04 |
| 申请号 |
US20010968370 |
申请日期 |
2001.10.01 |
| 申请人 |
SOLANKI RAJENDRA;PATHANGEY BALU |
发明人 |
SOLANKI RAJENDRA;PATHANGEY BALU |
| 分类号 |
C03C17/10;C03C17/22;C23C26/00;(IPC1-7):C23C16/00 |
主分类号 |
C03C17/10 |
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