发明名称 |
Masking material for dry etching |
摘要 |
The object of the present invention is to provide a masking material for dry etching, which is suitable for fine processing of a magnetic film as thin as a few nm such as NiFe or CoFe constituting a TMR film and capable of simplifying the process for producing a TMR element and reducing production costs related to facilities and materials. This object was solved by a masking material for dry etching of a magnetic material by using a mixed gas of carbon monoxide and a nitrogenous compound as etching gas, which comprises a metal (tantalum, tungsten, zirconium or hafnium) with a melting or boiling point increasing upon conversion thereof into a nitride or carbide.
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申请公布号 |
US2002038681(A1) |
申请公布日期 |
2002.04.04 |
申请号 |
US20010910854 |
申请日期 |
2001.07.24 |
申请人 |
NAKATANI ISAO;MASHIMO KIMIKO;MATSUI NAOKO |
发明人 |
NAKATANI ISAO;MASHIMO KIMIKO;MATSUI NAOKO |
分类号 |
C23F4/00;G11B5/31;G11B5/39;H01F41/30;H01L21/033;H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):C22C27/00;C22C16/00 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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