摘要 |
<p>A method of disordering a quantum well heterostructure (2), including the steps of irradiating the heterostructure (2) with a particle beam, wherein the energy of the beam is such that a defect distribution (40) created by the beam within the heterostructure (2) is substantially constant between a top interface (5) and a bottom interface (19) of the heterostructure (2) [see a portion (42) of the distribution (40)]. The irradiating particles can be ions or electrons (light ions such as hydrogen ions are preferred), and the energy is preferably such that the irradiating particles pass through the heterostructure (2), so a peak (44) of maximum defect density lies, for example, within a substrate (4) below the heterostructure (2). The method can be used to tune the wavelength range of an optoelectronic device including the heterostructure (2), such as a photodetector.</p> |