| 摘要 |
<p>An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the present method including providing a substrate of a semiconductor material having a predetermined substrate conductive type, the substrate being typically formed from a monocrystalline growth method, forming a second expitaxial layer (14) contiguous with the upper surface (28) of the substrate, the epitaxial layer (14) having a predetermined second layer conductive type, and thereafter forming a top layer (16) of dopant material in a predetermined pattern upon the upper surface of the second epitiaxial layer (14). The substrate and the top layers are then heated to form a diffusion region, after which the top layer is removed and the substrate is divided into individual devices.</p> |
