| 摘要 |
<p>PURPOSE: Provided is a method for manufacturing a semiconductor device in which a generation of cracks at a bonding pad part due to probing in a chip test are prevented. CONSTITUTION: In the method for manufacturing the semiconductor device, a bonding pad(2) is formed using a first and second wiring layers. A plurality of slit-like ditches are arranged and provided between the first wiring layer and the second wiring layer. A long-length direction of connection part(15) corresponds to the moving direction of a probe for contacting the bonding pad.</p> |
