发明名称 |
Semiconductor memory device and method for fabricating the same |
摘要 |
A semiconductor memory device according to the present invention includes isolations, active regions, control gate electrodes and floating gate electrodes. The isolations are formed on a semiconductor substrate. The active regions are defined on the semiconductor substrate and isolated from each other by the isolations. The control gate electrodes are formed over the semiconductor substrate. Each of the control gate electrodes crosses all of the isolations and all of the active regions with a first insulating film interposed between the control gate electrode and the semiconductor substrate. Each of the floating gate electrodes is formed for associated one of the active regions so as to cover a side face of associated one of the control gate electrodes with a second insulating film interposed between the floating gate electrode and the control gate electrodes. In this device, the isolations are spaced apart from each other along the width of the control gate electrodes and each of the isolations crosses all of the control gate electrodes and extends continuously along the length of the control gate electrodes.
|
申请公布号 |
US2002039823(A1) |
申请公布日期 |
2002.04.04 |
申请号 |
US20010964521 |
申请日期 |
2001.09.28 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KUSUMI MASATAKA;OGURA SEIKI |
分类号 |
H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|