发明名称 |
Photolithography process using multiple anti-reflective coatings |
摘要 |
A method for fabricating an integrated circuit using a photo-lithographic process includes the steps of placing at least two anti-reflective coating layers between a reflective surface and another material. The indices of refraction, absorptions, and thicknesses of the at least two anti-reflective coating layers are chosen such that the amplitudes and phase differences of radiation reflected from the anti-reflective coating layers, as well as any other reflective surfaces below the anti-reflective coating layers, mutually cancel when combined. The invention may be practiced using more than two layers of anti-reflective coating. Multiple layers of anti-reflective coating may be used below an inter-level dielectric, in which case they may serve the additional purpose of functioning as an etch-stop.
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申请公布号 |
US2002039820(A1) |
申请公布日期 |
2002.04.04 |
申请号 |
US20010941760 |
申请日期 |
2001.08.30 |
申请人 |
IRELAND PHILIP J.;GLASS THOMAS R.;SANDHU GURTEJ |
发明人 |
IRELAND PHILIP J.;GLASS THOMAS R.;SANDHU GURTEJ |
分类号 |
G03F7/09;H01L21/027;H01L21/033;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;G03C5/00;H01L29/94;H01L29/76;H01L21/476 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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