SEMICONDUCTOR LASER DEVICE

摘要

PURPOSE: A nitride based semiconductor laser device is provided to be capable of projecting a laser beam meeting requirements for a high-density optical disk system and high in reliability. CONSTITUTION: A semiconductor laser device is equipped with a lattice mismatching layer(12) which is formed of Ga1-xAlxN (0.04 <= x <= 0.08), and interposed between a GaN contact layer(11) and a GaAlN/GaN super-lattice structure clad layer(13). A core region(24) having an active layer(16) is formed on the GaAlN/GaN super lattice structure clad layer(13). A GaAl/GaN super lattice structure clad layer(19) is formed on the core region(24).