More reliable blue LED requiring only single wire bonding, is formed by GaN-based layers on substrate surrounded by e.g. cup-shaped conductor frame

摘要

The first GaN-based semiconductor layer (402) is formed on the insulating substrate (401), and is higher in the center. An intermediate GaN-based active layer (404) on the central section emits light. A second GaN-based layer (406) above this, lies below the first electrode (409). A conducting layer (411) covers the sidewalls and underside of the insulating substrate and is in electrical contact with the sidewalls of the first semiconductor layer. An Independent claim is included for the method of manufacture, essentially by a sequence of layer formation and selective etching.