SEMICONDUCTOR DEVICE HAVING SOI STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: Provided are an SOI semiconductor device and a method for manufacturing the same where a prescribed external connection electrode which is formed on a surface side of a chip is connected with a retaining substrate through a low resistance path and manufacturing is easy. CONSTITUTION: In this SOI semiconductor device, an SiO2 film(3), whose film thickness is about 1μm and a second Si substrate(2), are formed in this order on one main surface of a first Si substrate(1). A plurality of element-forming regions(50), which are isolated dielectrically with isolating trenches(9) in the second Si substrate(2), a region(10) for substrate contact which is arranged on a proper vacant region on a chip(110), and a plurality of electrodes(200G) for external connection are arranged. In the region(10) for substrate contact, a substrate contact hole(13) which penetrates a TEOS oxide film(11) and the SiO2 film(3) which are insulating material and reaches the first Si substrate(1), is formed. The substrate contact hole(13) is filled with a metal(15c) and is connected with a prescribed electrode(200G) for external connection using an Al wiring(16G).