| 摘要 |
A hetero-bipolar transistor comprises: a first-conductive-type Si semiconductor substrate layer; a first Si1-xGex layer (0<x<1) formed on the first-conductive-type Si semiconductor substrate, the first Si1-xGex layer being doped with a first-conductive-type impurity; a second Si1-xGex layer formed on the first Si1-xGex layer, the second Si1-xGex layer being doped with a second-conductive-type impurity; and a Si layer formed on the second Si1-xGex layer, the Si layer being doped with the first-conductive-type impurity by a concentration higher than that of the second-conductive-type impurity. A method of manufacturing the hetero-bipolar transistor, comprises: preparing a substrate having a first-conductive-type Si semiconductor substrate layer and a first Si1-xGex layer formed on the first-conductive-type Si semiconductor substrate layer, the first Si1-xGex layer doped with a first-conductive-type impurity approximately evenly in a depth direction thereof; forming a second Si1-xGex layer and a Si layer on the first Si1-xGex layer in a laminated manner, the second Si1-xGex layer being doped with a second-conductive-type impurity; forming an insulating film having an opening on the Si layer; and doping the first-conductive-type impurity to the Si layer through the opening by a concentration higher than that of the second-conductive-type impurity.
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