| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to simplify manufacturing processes and to prevent a short between bit lines by simultaneously forming a contact plug, a bit line and a pad. CONSTITUTION: An isolation layer is formed on a silicon substrate(11) defined by a peripheral and a cell regions. A polysilicon plug is formed in the cell region and titanium silicide is formed at the peripheral region. After sequentially forming a first interlayer dielectric, a nitride layer and a second interlayer dielectric on the resultant structure, bit lines and pad region are defined by selectively etching the second interlayer dielectric. A lower contact hole having narrow width compared to the bit lines and the pad region is formed by selectively etching the second interlayer dielectric, the nitride layer and the first interlayer dielectric. A tungsten bit line(31a), a tungsten plug(31b) and a tungsten pad(31c) are simultaneously formed in the lower contact hole. Then, a capacitor is formed in the cell region.
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