Light-emitting diode includes conductive layer covering sidewalls and bottom surface of insulating substrate

摘要

A light-emitting diode includes a conductive layer coated to cover the sidewalls and the bottom surface of an insulating substrate and to ohmically contact with a first GaN-based semiconductor layer. A light-emitting diode comprises a laminated semiconductor structure having a first gallium nitride (GaN)-based semiconductor layer (402) formed on top of an insulating substrate (401). An active layer is formed over the first GaN-based semiconductor layer for generating light, and a second GaN-based semiconductor layer is formed over the active layer. An annular isolation portion is formed to separate the second GaN-based semiconductor layer into a central second GaN-based semiconductor layer (406a) and a peripheral second GaN-based semiconductor layer (406b), and to separate the active layer into a central active layer (404a) and a peripheral active layer (404b). A first electrode (409) is formed on the central second GaN-based semiconductor layer without electrically connecting to the peripheral second GaN-based semiconductor layer. A conductive layer (411) is coated to cover the sidewalls and the bottom surface (400b) of the substrate and to ohmically contact with the first GaN-based semiconductor layer. An Independent claim is also included for a method of manufacturing the light-emitting diode.