| 摘要 |
<p>A resin-sealed semiconductor device which comprises a lead frame having a die bonding pad and an inner lead, a semiconductor chip installed on the die bonding pad via a die bonding material and a sealing material for sealing the semiconductor chip and the lead frame, wherein properties of the die bonding material and the sealing material after curing satisfies the following formulae: σe ≤ 0.2 X σb formula (1) Ui ≥ 2.0 X 10-6 X σei formula (2) Ud ≥ 4.69 X 10-6 X σed formula (3), wherein σb(Mpa) represents the flexural strength at break of the sealing material at 25 °, Ui(N • m) and Ud(N • m) represent shear strain energies of the sealing material at a soldering temperature for the inner lead and the die bonding pad, respectively, at a peak temperature during soldering, where σe = (1/log(kd¿1?)) X Ee1 X (αm -αe1) X Δ T1 formula (4), σei = Ee2 X (αe2 - αm) X ΔT2 formula (5), σed = log(kd2) X Ee2 X (αe2 - αm) X ΔT2 formula (6), kd1: a ratio of the flexural modulus Ed1(Mpa) of the die bonding material at 25 ° to 1 Mpa of elastic modulus (Ed1 > 1 Mpa), kd2: a ratio of the flexural modulus Ed2(Mpa) of the die bonding material at a peak temperature during soldering to 1 Mpa of elastic modulus (Ed2 > 1 Mpa), Ee1: a flexural modulus (Mpa) of the sealing material at 25 °, Ee2: a flexural modulus (Mpa) of the sealing material at a peak temperature during soldering, αe1: an average thermal expansion coefficient (1/°) of the sealing material from the forming temperature for the semiconductor to room temperature (25°), αe2: an average thermal expansion coefficient (1/°)of the sealing material from the forming temperature for the semiconductor to a peak temperature during soldering, αm: a thermal expansion coefficient (1/°) of the lead frame, ΔT1: the difference (°)between the forming temperature for the semiconductor and the low temperature side temperature in the temperature cycle, and ΔT2: the difference (°)between the forming temperature for the semiconductor and the peak temperature during soldering.</p> |
