BOOTSTRAPPED DUAL-GATE CLASS E AMPLIFIER CIRCUIT

摘要

A bootstrapped dual-gate Class E amplifier circuit (1) includes a first MOSFET (10) and a second MOSFET (12) connected in series and coupled between a dc voltage source terminal (14) and a common terminal (gnd). An rf input signal terminal (18) is coupled to a gate electrode of the first MOSFET (10) and a dc control voltage terminal (26) is coupled to a gate electrode of the second MOSFET (12), with a unidirectionally-conducting element (32) such as a diode-connected MOSFET being coupled between a drain electrode and the gate electrode of the second MOSFET (12). The output of the amplifier circuit (1) is taken from the drain electrode of the second MOSFET (12). This circuit configuration permits the first and second MOSFETs to withstand a larger output voltage swing, thus permitting the use of a higher supply voltage and resulting in a substantially increased maximum output power capability for a given load value.