发明名称 DIVISIONAL EXPOSURE METHOD USED FOR FABRICATING PROCESS OF SEMICONDUCTOR DEVICE AND DIVISIONAL EXPOSURE METHOD USED FOR THE SAME
摘要 PURPOSE: A divisional exposure method used for a fabricating process of a semiconductor device and a divisional exposure method used for the same are provided to obtain a process margin by exposing a photoresist layer in region units. CONSTITUTION: An exposure apparatus includes an exposure source(1100) and an illumination optics(1200). A lamp or a laser is used as the exposure source(1100). The exposure apparatus has a reticle stage(1300) for handling a mask, an optics(1400), and a wafer stage(1500). The wafer stage(1500) has a chuck(1510). A wafer(1530) coated with a photoresist layer(1550) is loaded on the chuck(1510). In the exposure apparatus, a plurality blade(210,250) is induced to an upper side or a lower side of a mask(100) in order to expose and cover a part of the mask(100). The blades(210,250) are aligned to the mask(100).
申请公布号 KR20020025382(A) 申请公布日期 2002.04.04
申请号 KR20000057118 申请日期 2000.09.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 NAM, DONG SEOK;SUNG, NAK GEUN;YEO, GI SEONG
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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