发明名称 |
DIVISIONAL EXPOSURE METHOD USED FOR FABRICATING PROCESS OF SEMICONDUCTOR DEVICE AND DIVISIONAL EXPOSURE METHOD USED FOR THE SAME |
摘要 |
PURPOSE: A divisional exposure method used for a fabricating process of a semiconductor device and a divisional exposure method used for the same are provided to obtain a process margin by exposing a photoresist layer in region units. CONSTITUTION: An exposure apparatus includes an exposure source(1100) and an illumination optics(1200). A lamp or a laser is used as the exposure source(1100). The exposure apparatus has a reticle stage(1300) for handling a mask, an optics(1400), and a wafer stage(1500). The wafer stage(1500) has a chuck(1510). A wafer(1530) coated with a photoresist layer(1550) is loaded on the chuck(1510). In the exposure apparatus, a plurality blade(210,250) is induced to an upper side or a lower side of a mask(100) in order to expose and cover a part of the mask(100). The blades(210,250) are aligned to the mask(100).
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申请公布号 |
KR20020025382(A) |
申请公布日期 |
2002.04.04 |
申请号 |
KR20000057118 |
申请日期 |
2000.09.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NAM, DONG SEOK;SUNG, NAK GEUN;YEO, GI SEONG |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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