发明名称 |
METHOD FOR FORMING SOG LAYER ON WAFER |
摘要 |
PURPOSE: A method for forming an SOG(Spin On Glass) layer on a wafer is provided to prevent a rinse error by using an SOG solution including toluene of 3 and less percent. CONSTITUTION: A wafer(200) is loaded on a rotary support plate. An SOG solution injection hole(300) is induced to a front direction of the wafer(200). The SOG solution is dropped from the SOG solution injection hole(300) into the wafer(200). The SOG solution is spread on a surface of the wafer(200) by rotating the wafer(200). An SOG layer(100) is formed on the wafer(200). A rinse nozzle(400) is induced to a rear direction of the wafer(300). The rinse solution is injected to an edge of the wafer(200). The SOG solution is removed from a rear face and a front face of the wafer(200). At this time, A rinse error is reduced by using the SOG solution including toluene of 3 and less percent.
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申请公布号 |
KR20020024888(A) |
申请公布日期 |
2002.04.03 |
申请号 |
KR20000056713 |
申请日期 |
2000.09.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, JEONG SIK;KANG, DAE WON;KIM, HONG GI;LEE, JEONG HO |
分类号 |
H01L21/31;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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主权项 |
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地址 |
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