发明名称 METHOD FOR FORMING SOG LAYER ON WAFER
摘要 PURPOSE: A method for forming an SOG(Spin On Glass) layer on a wafer is provided to prevent a rinse error by using an SOG solution including toluene of 3 and less percent. CONSTITUTION: A wafer(200) is loaded on a rotary support plate. An SOG solution injection hole(300) is induced to a front direction of the wafer(200). The SOG solution is dropped from the SOG solution injection hole(300) into the wafer(200). The SOG solution is spread on a surface of the wafer(200) by rotating the wafer(200). An SOG layer(100) is formed on the wafer(200). A rinse nozzle(400) is induced to a rear direction of the wafer(300). The rinse solution is injected to an edge of the wafer(200). The SOG solution is removed from a rear face and a front face of the wafer(200). At this time, A rinse error is reduced by using the SOG solution including toluene of 3 and less percent.
申请公布号 KR20020024888(A) 申请公布日期 2002.04.03
申请号 KR20000056713 申请日期 2000.09.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, JEONG SIK;KANG, DAE WON;KIM, HONG GI;LEE, JEONG HO
分类号 H01L21/31;(IPC1-7):H01L21/31 主分类号 H01L21/31
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