| 摘要 |
PURPOSE: Provided are an exposure method, an exposure apparatus, an X-ray mask and a resist to achieve enhancement in resolution and throughput, as well as a semiconductor device and a microstructure manufactured by means of them. CONSTITUTION: The exposure method comprises radiating X ray(2) emitted from an X-ray source(1) to a resist film(10) via an X-ray mask(8). A material constituting said resist film(10) is selected to absorb, by said resist film(10), X ray(2) having an average wavelength equal to or shorter than an average wavelength of X ray(2) radiated to said resist film(10). The exposure apparatus includes an X-ray mirror(3a,3b). The X-ray mirror(3a, 3b) has a surface reflecting X ray(2), and the surface is constituted of a material including at least one selected from the group consisting of hafnium, tantalum, tungsten, rhenium, osmium, iridium, and alloys, nitrides, carbides and borides of foregoing elements. |
