SEMICONDUCTOR DEVICE FOR PREVENTING CHARACTERISTIC DETERIORATION OF ELECTROSTATIC DISCHARGE PROTECTION DEVICE DUE TO FORMATION OF SILICIDE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device for preventing characteristic deterioration of an electrostatic discharge protection device due to formation of a silicide and a method for fabricating the same are provided to perform a silicide formation process without forming a silicide formation prevention layer on a drain region of a transistor. CONSTITUTION: An insulating layer pattern(I1) is formed selectively on a semiconductor substrate. A gate electrode(G) is formed on the semiconductor substrate. A source region(S) and a drain region(D) are formed within the semiconductor substrate of both ends of the gate electrode(G). A silicide formation process is performed under an exposing state of an electrostatic discharge protection device. Accordingly, a degradation phenomenon of a semiconductor device is prevented by forming the insulating layer(I1) before a transistor fabricating process is completed.