| 发明名称 |
Process and apparatus for forming semiconductor thin film |
| 摘要 |
A substrate M having a thin film on its surface is supported on a support 4. A gas discharge opening 12A of hydrogen radicals which faces the thin film on the substrate is provided. A semiconductor thin film is deposited on the substrate M by supplying the thin film with hydrogen radicals H from the gas discharge opening 12A while the substrate M is cooled via to 40 K or less through heat conduction via the support 4 by means of refrigerator 3. <IMAGE> |
| 申请公布号 |
EP1193325(A1) |
申请公布日期 |
2002.04.03 |
| 申请号 |
EP20010106350 |
申请日期 |
2001.03.16 |
| 申请人 |
YAMANASHI PREFECTURAL FEDERATION OF SOCIETIES |
发明人 |
HIRAOKA, KENZO;MIYATA, CHIHARU;TAKAMATSU, TOSHIYUKI |
| 分类号 |
H01L21/205;C23C16/452;H01L21/20;H01L21/203;H01L31/04 |
主分类号 |
H01L21/205 |
| 代理机构 |
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